2,001 research outputs found

    ΠΠ΅Ρ€Π°Π·Ρ€ΡƒΡˆΠ°ΡŽΡ‰ΠΈΠΉ ΠΊΠΎΠ½Ρ‚Ρ€ΠΎΠ»ΡŒ качСства конструкции управляСмых ΠΏΠΎ скорости Π΄Π²ΠΈΠ³Π°Ρ‚Π΅Π»Π΅ΠΉ-ΠΌΠ°Ρ…ΠΎΠ²ΠΈΠΊΠΎΠ² для систСм ΠΎΡ€ΠΈΠ΅Π½Ρ‚Π°Ρ†ΠΈΠΈ космичСских Π°ΠΏΠΏΠ°Ρ€Π°Ρ‚ΠΎΠ² Π½Π° этапах ΡΠΊΡΠΏΠ΅Ρ€ΠΈΠΌΠ΅Π½Ρ‚Π°Π»ΡŒΠ½ΠΎΠΉ ΠΎΡ‚Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ

    Get PDF
    Π”ΠΎΡΡ‚ΠΎΠ²Π΅Ρ€Π½ΠΎΡΡ‚ΡŒ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚ΠΎΠ² опрСдСлСния динамичСских качСств космичСского Π°ΠΏΠΏΠ°Ρ€Π°Ρ‚Π° сущСствСнным ΠΎΠ±Ρ€Π°Π·ΠΎΠΌ зависит ΠΎΡ‚ достовСрности опрСдСлСния силовых ΠΈ ΠΌΠΎΠΌΠ΅Π½Ρ‚Π½Ρ‹Ρ… Π²ΠΎΠ·ΠΌΡƒΡ‰Π΅Π½ΠΈΠΉ, Π΄Π΅ΠΉΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… Π½Π° космичСский Π°ΠΏΠΏΠ°Ρ€Π°Ρ‚ со стороны Π΅Π³ΠΎ Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½Ρ‹Ρ… систСм. Π˜Π½Ρ‚Π΅Π³Ρ€Π°Π»ΡŒΠ½Π°Ρ ΠΎΡ†Π΅Π½ΠΊΠ° динамичСского состояния управляСмого ΠΏΠΎ скорости двигатСля-ΠΌΠ°Ρ…ΠΎΠ²ΠΈΠΊΠ° выполняСтся посрСдством опрСдСлСния Π΅Π³ΠΎ силомомСнтной ΠΈ Π²ΠΈΠ±Ρ€Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΉ характСристик

    ΠœΠ΅Ρ‚ΠΎΠ΄ обнаруТСния Π³Ρ€ΡƒΠΏΠΏΡ‹ ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² с ΠΏΠ΅Ρ€Π΅ΠΊΡ€Ρ‹Ρ‚ΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ

    Get PDF
    ΠŸΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½ ΠΌΠ΅Ρ‚ΠΎΠ΄ обнаруТСния пСрСкрытия ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ². ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½Π° оптимизация ΠΎΡ‚Π½ΠΎΡˆΠ΅Π½ΠΈΡ сигнал/ΡˆΡƒΠΌ ΠΏΡ€ΠΈ ΠΎΠ±Π½Π°Ρ€ΡƒΠΆΠ΅Π½ΠΈΠΈ Π³Ρ€ΡƒΠΏΠΏΡ‹ ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² с ΠΏΠ΅Ρ€Π΅ΠΊΡ€Ρ‹Ρ‚ΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ. На ΠΏΡ€ΠΈΠΌΠ΅Ρ€Π΅ Π³Ρ€ΡƒΠΏΠΏΡ‹ Π΄Π²ΡƒΡ… ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² с пространствСнно-Π²Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹ΠΌ ΠΏΠ΅Ρ€Π΅ΠΊΡ€Ρ‹Ρ‚ΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±Ρ€Π°ΠΆΠ΅Π½ΠΈΠΉ Π΄Π°Π½Π° ΠΎΡ†Π΅Π½ΠΊΠ° измСнСния Ρ„Π°Π·Ρ‹ сигнала ΠΈ количСствСнная ΠΎΡ†Π΅Π½ΠΊΠ° Π²Ρ‹ΠΈΠ³Ρ€Ρ‹ΡˆΠ° ΠΏΠΎ вСроятности обнаруТСния ΠΎΠ±ΡŠΠ΅ΠΊΡ‚ΠΎΠ² ΠΏΡ€Π΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Ρ‹ΠΌ ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠΌ

    Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications

    Full text link
    We present a circuit-design compatible large-signal compact model of metal-insulator-graphene (MIG) diodes for describing its dynamic response for the first time. The model essentially consists of a voltage-dependent diode intrinsic capacitance coupled with a static voltage-dependent current source, the latter accounts for the vertical electron transport from/towards graphene, which has been modeled by means of the Dirac-thermionic electron transport theory through the insulator barrier. Importantly, the image force effect has been found to play a key role in determining the barrier height, so it has been incorporated into the model accordingly. The resulting model has been implemented in Verilog A to be used in existing circuit simulators and benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a power detector.Comment: 4 pages, 5 figures, 1 tabl

    An Historical Survey of the Establishment of an Orchestral Tradition in Christchurch to 1939

    Get PDF
    This dissertation is the first study devoted solely to the history of an orchestral tradition in Christchurch. Within a timeframe stretching from the beginning of the local settlement to the establishment of the first β€œnational” orchestra in 1939, it provides detailed portrayals of all facets of amateur and professional orchestral activity. This includes the histories of all orchestral bodies, their membership, a chronology of concerts, repertoire, programme structure and critical reception. This dissertation explains the advance of orchestral tradition that is at times tentative and at times bold, until it is securely entrenched as a mainstream musical activity in Christchurch. A preliminary narration, which begins in 1857, ends in 1906 with the International Exhibition. This is then discussed as a landmark event for orchestral music in Christchurch. A series of case studies for the period of 1908 to 1939, covers each of the five major orchestral groups that flourished in this period. The case studies also include the footprints of development, the β€œincidental” music performed by the cinema orchestras, and the β€œstudio only” performances of many broadcasting groups. The role played by minor orchestral groups as an β€œalternative” music culture is included, along with the impact of orchestras associated with visiting opera companies. The final section is a detailed analysis of the repertoire and programme construction, and a discussion of the people who played an influential role in the development of an orchestral tradition. Numerous tables and illustrations are provided. A number of appendices are also attached: a chronology of orchestral concerts in Christchurch; some significant orchestra personnel lists; an extensive set of source readings discussing the formation of a permanent orchestra; a chronology of orchestral activity for a selection of Christchurch musicians; a timeline of visiting opera companies, and a selection of concert programmes

    Π—ΠΠ’Π˜Π‘Π˜ΠœΠžΠ‘Π’Π¬ Π‘ΠŸΠ•ΠšΠ’Π Π ΠŸΠžΠ’Π Π•Π‘Π›Π―Π•ΠœΠžΠ™ МОЩНОБВИ Π­Π›Π•ΠšΠ’Π ΠžΠ”Π’Π˜Π“ΠΠ’Π•Π›Π― НАБОБА ОВ Π€Π˜Π—Π˜Π§Π•Π‘ΠšΠ˜Π₯ ΠŸΠΠ ΠΠœΠ•Π’Π ΠžΠ’ ΠœΠ•Π₯ΠΠΠ˜Π—ΠœΠ

    Get PDF
    In article dependence of the electric motor power consumption spectrum on physical parameters of the pump is proved. It is proved transitivity of transformation of methods of vibration-acoustic diagnostics in methods energy power diagnosticsΠ£ статті Π΄ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Π·Π°Π»Π΅ΠΆΠ½Ρ–ΡΡ‚ΡŒ спСктру споТиваємої потуТності Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ΄Π²ΠΈΠ³ΡƒΠ½Π° насосу Π²Ρ–Π΄ Ρ„Ρ–Π·ΠΈΡ‡Π½Ρ–Ρ… ΠΏΠ°Ρ€Π°ΠΌΠ΅Ρ‚Ρ€Ρ–Π² ΠΌΠ΅Ρ…Π°Π½Ρ–Π·ΠΌΡƒ. Π”ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Ρ‚Ρ€Π°Π½Π·ΠΈΡ‚ΠΈΠ²Π½Ρ–ΡΡ‚ΡŒ пСрСтворСння ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ–Π² віброакустичної діагностики Π² ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈ СнСргодіагностики

    All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

    Full text link
    We report on the fabrication and characterization of field effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal oxide semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN) stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500 cm2^{2}/Vs. Improved output conductance is observed in direct current (DC) measurements under ambient conditions, indicating potential for radio-frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low frequency signal amplifier circuit. RF characterization of the GFETs yields an fT_{T} x Lg_{g} product of 2.64 GHzΞΌ\mum and an fMax_{Max} x Lg_{g} product of 5.88 GHzΞΌ\mum. This study presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step towards scalable, all CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit architectures.Comment: 6 page

    ΠœΠ°Π³Π½ΠΈΡ‚Π½Π°Ρ систСма авторСзонансного ускоритСля

    Get PDF
    • …
    corecore