2,001 research outputs found
ΠΠ΅ΡΠ°Π·ΡΡΡΠ°ΡΡΠΈΠΉ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΊΠ°ΡΠ΅ΡΡΠ²Π° ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΈ ΡΠΏΡΠ°Π²Π»ΡΠ΅ΠΌΡΡ ΠΏΠΎ ΡΠΊΠΎΡΠΎΡΡΠΈ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΉ-ΠΌΠ°Ρ ΠΎΠ²ΠΈΠΊΠΎΠ² Π΄Π»Ρ ΡΠΈΡΡΠ΅ΠΌ ΠΎΡΠΈΠ΅Π½ΡΠ°ΡΠΈΠΈ ΠΊΠΎΡΠΌΠΈΡΠ΅ΡΠΊΠΈΡ Π°ΠΏΠΏΠ°ΡΠ°ΡΠΎΠ² Π½Π° ΡΡΠ°ΠΏΠ°Ρ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΠΎΠΉ ΠΎΡΡΠ°Π±ΠΎΡΠΊΠΈ
ΠΠΎΡΡΠΎΠ²Π΅ΡΠ½ΠΎΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΎΠ² ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ Π΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΊΠ°ΡΠ΅ΡΡΠ² ΠΊΠΎΡΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π°ΠΏΠΏΠ°ΡΠ°ΡΠ° ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΠΌ ΠΎΠ±ΡΠ°Π·ΠΎΠΌ Π·Π°Π²ΠΈΡΠΈΡ ΠΎΡ Π΄ΠΎΡΡΠΎΠ²Π΅ΡΠ½ΠΎΡΡΠΈ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ ΡΠΈΠ»ΠΎΠ²ΡΡ
ΠΈ ΠΌΠΎΠΌΠ΅Π½ΡΠ½ΡΡ
Π²ΠΎΠ·ΠΌΡΡΠ΅Π½ΠΈΠΉ, Π΄Π΅ΠΉΡΡΠ²ΡΡΡΠΈΡ
Π½Π° ΠΊΠΎΡΠΌΠΈΡΠ΅ΡΠΊΠΈΠΉ Π°ΠΏΠΏΠ°ΡΠ°Ρ ΡΠΎ ΡΡΠΎΡΠΎΠ½Ρ Π΅Π³ΠΎ ΡΡΠ½ΠΊΡΠΈΠΎΠ½Π°Π»ΡΠ½ΡΡ
ΡΠΈΡΡΠ΅ΠΌ. ΠΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½Π°Ρ ΠΎΡΠ΅Π½ΠΊΠ° Π΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΡΡΠΎΡΠ½ΠΈΡ ΡΠΏΡΠ°Π²Π»ΡΠ΅ΠΌΠΎΠ³ΠΎ ΠΏΠΎ ΡΠΊΠΎΡΠΎΡΡΠΈ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Ρ-ΠΌΠ°Ρ
ΠΎΠ²ΠΈΠΊΠ° Π²ΡΠΏΠΎΠ»Π½ΡΠ΅ΡΡΡ ΠΏΠΎΡΡΠ΅Π΄ΡΡΠ²ΠΎΠΌ ΠΎΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΡ Π΅Π³ΠΎ ΡΠΈΠ»ΠΎΠΌΠΎΠΌΠ΅Π½ΡΠ½ΠΎΠΉ ΠΈ Π²ΠΈΠ±ΡΠ°ΡΠΈΠΎΠ½Π½ΠΎΠΉ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ
ΠΠ΅ΡΠΎΠ΄ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΡ Π³ΡΡΠΏΠΏΡ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² Ρ ΠΏΠ΅ΡΠ΅ΠΊΡΡΡΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ
ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ ΠΌΠ΅ΡΠΎΠ΄ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΡ ΠΏΠ΅ΡΠ΅ΠΊΡΡΡΠΈΡ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ². ΠΡΠΎΠ²Π΅Π΄Π΅Π½Π° ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΡ ΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΡΠΈΠ³Π½Π°Π»/ΡΡΠΌ ΠΏΡΠΈ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΠΈ Π³ΡΡΠΏΠΏΡ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² Ρ ΠΏΠ΅ΡΠ΅ΠΊΡΡΡΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ. ΠΠ° ΠΏΡΠΈΠΌΠ΅ΡΠ΅ Π³ΡΡΠΏΠΏΡ Π΄Π²ΡΡ
ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² Ρ ΠΏΡΠΎΡΡΡΠ°Π½ΡΡΠ²Π΅Π½Π½ΠΎ-Π²ΡΠ΅ΠΌΠ΅Π½Π½ΡΠΌ ΠΏΠ΅ΡΠ΅ΠΊΡΡΡΠΈΠ΅ΠΌ ΠΈΠ·ΠΎΠ±ΡΠ°ΠΆΠ΅Π½ΠΈΠΉ Π΄Π°Π½Π° ΠΎΡΠ΅Π½ΠΊΠ° ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΡ ΡΠ°Π·Ρ ΡΠΈΠ³Π½Π°Π»Π° ΠΈ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π΅Π½Π½Π°Ρ ΠΎΡΠ΅Π½ΠΊΠ° Π²ΡΠΈΠ³ΡΡΡΠ° ΠΏΠΎ Π²Π΅ΡΠΎΡΡΠ½ΠΎΡΡΠΈ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½ΠΈΡ ΠΎΠ±ΡΠ΅ΠΊΡΠΎΠ² ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ
Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications
We present a circuit-design compatible large-signal compact model of
metal-insulator-graphene (MIG) diodes for describing its dynamic response for
the first time. The model essentially consists of a voltage-dependent diode
intrinsic capacitance coupled with a static voltage-dependent current source,
the latter accounts for the vertical electron transport from/towards graphene,
which has been modeled by means of the Dirac-thermionic electron transport
theory through the insulator barrier. Importantly, the image force effect has
been found to play a key role in determining the barrier height, so it has been
incorporated into the model accordingly. The resulting model has been
implemented in Verilog A to be used in existing circuit simulators and
benchmarked against an experimental 6-nm TiO2 barrier MIG diode working as a
power detector.Comment: 4 pages, 5 figures, 1 tabl
An Historical Survey of the Establishment of an Orchestral Tradition in Christchurch to 1939
This dissertation is the first study devoted solely to the history of an orchestral tradition in Christchurch. Within a timeframe stretching from the beginning of the local settlement to the establishment of the first βnationalβ orchestra in 1939, it provides detailed portrayals of all facets of amateur and professional orchestral activity.
This includes the histories of all orchestral bodies, their membership, a chronology of concerts, repertoire, programme structure and critical reception. This dissertation explains the advance of orchestral tradition that is at times tentative and at times bold, until it is securely entrenched as a mainstream musical activity in Christchurch.
A preliminary narration, which begins in 1857, ends in 1906 with the International Exhibition. This is then discussed as a landmark event for orchestral music in Christchurch. A series of case studies for the period of 1908 to 1939, covers each of the five major orchestral groups that flourished in this period. The case studies also include the footprints of development, the βincidentalβ music performed by the cinema orchestras, and the βstudio onlyβ performances of many broadcasting groups. The role played by minor orchestral groups as an βalternativeβ music culture is included, along with the impact of orchestras associated with visiting opera companies. The final section is a detailed analysis of the repertoire and programme construction, and a discussion of the people who played an influential role in the development of an orchestral tradition.
Numerous tables and illustrations are provided. A number of appendices are also attached: a chronology of orchestral concerts in Christchurch; some significant orchestra personnel lists; an extensive set of source readings discussing the formation of a permanent orchestra; a chronology of orchestral activity for a selection of Christchurch musicians; a timeline of visiting opera companies, and a selection of concert programmes
ΠΠΠΠΠ‘ΠΠΠΠ‘Π’Π¬ Π‘ΠΠΠΠ’Π Π ΠΠΠ’Π ΠΠΠΠ―ΠΠΠΠ ΠΠΠ©ΠΠΠ‘Π’Π ΠΠΠΠΠ’Π ΠΠΠΠΠΠΠ’ΠΠΠ― ΠΠΠ‘ΠΠ‘Π ΠΠ’ Π€ΠΠΠΠ§ΠΠ‘ΠΠΠ₯ ΠΠΠ ΠΠΠΠ’Π ΠΠ ΠΠΠ₯ΠΠΠΠΠΠ
In article dependence of the electric motor power consumption spectrum on physical
parameters of the pump is proved. It is proved transitivity of transformation of methods of vibration-acoustic diagnostics in methods energy power diagnosticsΠ£ ΡΡΠ°ΡΡΡ Π΄ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Π·Π°Π»Π΅ΠΆΠ½ΡΡΡΡ ΡΠΏΠ΅ΠΊΡΡΡ ΡΠΏΠΎΠΆΠΈΠ²Π°ΡΠΌΠΎΡ ΠΏΠΎΡΡΠΆΠ½ΠΎΡΡΡ Π΅Π»Π΅ΠΊΡΡΠΎΠ΄Π²ΠΈΠ³ΡΠ½Π° Π½Π°ΡΠΎΡΡ
Π²ΡΠ΄ ΡΡΠ·ΠΈΡΠ½ΡΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡΠ² ΠΌΠ΅Ρ
Π°Π½ΡΠ·ΠΌΡ. ΠΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΡΡΠ°Π½Π·ΠΈΡΠΈΠ²Π½ΡΡΡΡ ΠΏΠ΅ΡΠ΅ΡΠ²ΠΎΡΠ΅Π½Π½Ρ ΠΌΠ΅ΡΠΎΠ΄ΡΠ²
Π²ΡΠ±ΡΠΎΠ°ΠΊΡΡΡΠΈΡΠ½ΠΎΡ Π΄ΡΠ°Π³Π½ΠΎΡΡΠΈΠΊΠΈ Π² ΠΌΠ΅ΡΠΎΠ΄ΠΈ Π΅Π½Π΅ΡΠ³ΠΎΠ΄ΡΠ°Π³Π½ΠΎΡΡΠΈΠΊΠΈ
All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
We report on the fabrication and characterization of field effect transistors
(FETs) based on chemical vapor deposited (CVD) graphene encapsulated between
few layer CVD boron nitride (BN) sheets with complementary metal oxide
semiconductor (CMOS) compatible nickel edge contacts. Non-contact Tera-hertz
time domain spectroscopy (THz-TDS) of large-area BN/graphene/BN (BN/G/BN)
stacks reveals average sheet conductivity >1 mS/sq and average mobility of 2500
cm/Vs. Improved output conductance is observed in direct current (DC)
measurements under ambient conditions, indicating potential for radio-frequency
(RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a
low frequency signal amplifier circuit. RF characterization of the GFETs yields
an f x L product of 2.64 GHzm and an f x L
product of 5.88 GHzm. This study presents for the first time THz-TDS usage
in combination with other characterization methods for device performance
assessment on BN/G/BN stacks. The results serve as a step towards scalable, all
CVD 2D material-based FETs for CMOS compatible future nanoelectronic circuit
architectures.Comment: 6 page
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